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SI6459BDQ Spec and Replacement


   Type Designator: SI6459BDQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TSSOP-8

 SI6459BDQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI6459BDQ Specs

 ..1. Size:204K  vishay
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SI6459BDQ

Si6459BDQ Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.115 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 60 0.150 at VGS = - 4.5 V - 2.4 Compliant to RoHS Directive 2002/95/EC S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 ... See More ⇒

 8.1. Size:71K  vishay
 si6459dq.pdf pdf_icon

SI6459BDQ

Si6459DQ Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = 10 V "2.6 60 60 0.150 @ VGS = 4.5 V "2.4 S* TSSOP-8 G D D 1 8 D * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 Si6459DQ S S 3 6 G D 4 5 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Sy... See More ⇒

Detailed specifications: SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , IRF1010E , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , SI6473DQ , SI6544BDQ , SI6562CDQ .

Keywords - SI6459BDQ MOSFET specs

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