All MOSFET. SI6459BDQ Datasheet

 

SI6459BDQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI6459BDQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TSSOP-8

 SI6459BDQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI6459BDQ Datasheet (PDF)

 ..1. Size:204K  vishay
 si6459bdq.pdf

SI6459BDQ SI6459BDQ

Si6459BDQVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 600.150 at VGS = - 4.5 V - 2.4 Compliant to RoHS Directive 2002/95/ECS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8

 8.1. Size:71K  vishay
 si6459dq.pdf

SI6459BDQ SI6459BDQ

Si6459DQVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.120 @ VGS = 10 V "2.660600.150 @ VGS = 4.5 V "2.4S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6459DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RU55200Q | IXFH20N80Q

 

 
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