All MOSFET. SI6459BDQ Datasheet

 

SI6459BDQ Datasheet and Replacement


   Type Designator: SI6459BDQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TSSOP-8
 

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SI6459BDQ Datasheet (PDF)

 ..1. Size:204K  vishay
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SI6459BDQ

Si6459BDQVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 600.150 at VGS = - 4.5 V - 2.4 Compliant to RoHS Directive 2002/95/ECS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8

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SI6459BDQ

Si6459DQVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.120 @ VGS = 10 V "2.660600.150 @ VGS = 4.5 V "2.4S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6459DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

Datasheet: SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , IRF530 , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , SI6473DQ , SI6544BDQ , SI6562CDQ .

History: IPN80R900P7

Keywords - SI6459BDQ MOSFET datasheet

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