SI6459BDQ Datasheet. Specs and Replacement

Type Designator: SI6459BDQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TSSOP-8

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SI6459BDQ datasheet

 ..1. Size:204K  vishay
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SI6459BDQ

Si6459BDQ Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.115 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 60 0.150 at VGS = - 4.5 V - 2.4 Compliant to RoHS Directive 2002/95/EC S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 ... See More ⇒

 8.1. Size:71K  vishay
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SI6459BDQ

Si6459DQ Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = 10 V "2.6 60 60 0.150 @ VGS = 4.5 V "2.4 S* TSSOP-8 G D D 1 8 D * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 Si6459DQ S S 3 6 G D 4 5 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Sy... See More ⇒

Detailed specifications: SI6404DQ, SI6410DQ, SI6413DQ, SI6415DQ, SI6423DQ, SI6433BDQ, SI6435ADQ, SI6443DQ, IRF1010E, SI6463BDQ, SI6465DQ, SI6466ADQ, SI6467BDQ, SI6469DQ, SI6473DQ, SI6544BDQ, SI6562CDQ

Keywords - SI6459BDQ MOSFET specs

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