All MOSFET. SI6913DQ Datasheet

 

SI6913DQ Datasheet and Replacement


   Type Designator: SI6913DQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.5 nC
   tr ⓘ - Rise Time: 80 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP-8
 

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SI6913DQ Datasheet (PDF)

 ..1. Size:216K  vishay
 si6913dq.pdf pdf_icon

SI6913DQ

Si6913DQVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ()ID (A) Material categorization:0.021 at VGS = - 4.5 V For definitions of compliance please see- 5.8www.vishay.com/doc?999120.028 at VGS = - 2.5 V - 12 - 5.00.037 at VGS = - 1.8 V - 4.4APPLICATIONS Load Switch Battery Sw

 0.1. Size:855K  cn vbsemi
 si6913dq-t1.pdf pdf_icon

SI6913DQ

SI6913DQ-T1www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2

Datasheet: SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , SI6473DQ , SI6544BDQ , SI6562CDQ , IRFZ24N , SI6925ADQ , SI6926ADQ , SI6928DQ , SI6943BDQ , SI6954ADQ , SI6963BDQ , SI6968BEDQ , SI6981DQ .

History: NCEP050N85

Keywords - SI6913DQ MOSFET datasheet

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