SI6913DQ MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI6913DQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.5 nC
   trⓘ - Rise Time: 80 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP-8

SI6913DQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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