SI6981DQ Datasheet. Specs and Replacement
Type Designator: SI6981DQ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TSSOP-8
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SI6981DQ substitution
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SI6981DQ datasheet
si6981dq.pdf
Si6981DQ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.031 at VGS = - 4.5 V - 4.8 RoHS 0.041 at VGS = - 2.5 V - 20 - 4.2 COMPLIANT APPLICATIONS 0.058 at VGS = - 1.8 V - 3.5 Load Switch Battery Switch S1 S2 G1 G2 TSSOP-8 D1 1 D2 8 S1 2 S2 7 S1 3 S2 ... See More ⇒
si6983dq.pdf
Si6983DQ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.024 at VGS = - 4.5 V - 5.4 RoHS COMPLIANT 0.030 at VGS = - 2.5 V - 20 - 4.8 APPLICATIONS 0.042 at VGS = - 1.8 V Load Switch - 4.0 Battery Switch S1 S2 TSSOP-8 G1 G2 D 1 1 D 2 8 S 1 2 S 2 7 S 1... See More ⇒
Detailed specifications: SI6913DQ, SI6925ADQ, SI6926ADQ, SI6928DQ, SI6943BDQ, SI6954ADQ, SI6963BDQ, SI6968BEDQ, 5N60, SI6993DQ, SI7100DN, SI7101DN, SI7102DN, SI7104DN, SI7106DN, SI7107DN, SI7108DN
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
