All MOSFET. SI7106DN Datasheet

 

SI7106DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7106DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.5 nC
   trⓘ - Rise Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: POWERPAK-1212-8

 SI7106DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7106DN Datasheet (PDF)

 ..1. Size:76K  vishay
 si7106dn.pdf

SI7106DN SI7106DN

Si7106DNVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.0062 at VGS = 4.5 V RoHS 19.520 17.5 nC COMPLIANT New Low Thermal Resistance PowerPAK 0.0098 at VGS = 2.5 V 15.5Package with Low 1.07 mm Profile PWM Optimized

 9.1. Size:547K  vishay
 si7100dn.pdf

SI7106DN SI7106DN

Si7100DNVishay SiliconixN-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)e Qg (Typ.) TrenchFET Power MOSFETRoHS0.0035 at VGS = 4.5 V 35COMPLIANT Low Thermal Resistance PowerPAK Package8 40 nC0.0045 at VGS = 2.5 V 35with Small Size and Low 1.07 mm Profile 100 % Rg TestedPowerPAK 12

 9.2. Size:550K  vishay
 si7107dn.pdf

SI7106DN SI7106DN

Si7107DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0108 at VGS = - 4.5 V - 15.3 TrenchFET Power MOSFET: 1.8 V Rated0.015 at VGS = - 2.5 V - 20 - 13.0 Ultra Low On-Resistance for Increased 0.020 at VGS = - 1.8 V Battery Life- 11.2 New PowerPAK P

 9.3. Size:563K  vishay
 si7101dn.pdf

SI7106DN SI7106DN

New ProductSi7101DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0072 at VGS = - 10 V - 35d- 30 32 nC For definitions of compliance please see0.0130 at VGS = - 4.5 V - 35dwww.vishay.com/doc?99912PowerPAK 1212-8APPL

 9.4. Size:530K  vishay
 si7108dn.pdf

SI7106DN SI7106DN

Si7108DNVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET for RoHS0.0049 at VGS = 10 V 22COMPLIANT20 20 Ultra Low On-Resistance 0.0061 at VGS = 4.5 V 19.7 New Low Thermal Resistance PowerPAK Package withLow 1.07 mm Profil

 9.5. Size:578K  vishay
 si7102dn.pdf

SI7106DN SI7106DN

Si7102DNVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Available0.0038 at VGS = 4.5 V 35 TrenchFET Power MOSFET12 41 nC0.0047 at VGS = 2.5 V 35 Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mmProfile 100 % Rg TestedPo

 9.6. Size:540K  vishay
 si7104dn.pdf

SI7106DN SI7106DN

Si7104DNVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)e Qg (Typ.) TrenchFET Power MOSFETsRoHS0.0037 at VGS = 4.5 V 35COMPLIANT Low Thermal Resistance PowerPAK Package12 23 nC0.007 at VGS = 2.5 V 35with Small Size and Low 1.07 mm Profile 100 % Rg TestedAPPLICATI

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQB12P20

 

 
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