SI7135DP Datasheet. Specs and Replacement

Type Designator: SI7135DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: POWERPAK-SO-8

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SI7135DP datasheet

 ..1. Size:480K  vishay
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SI7135DP

New Product Si7135DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0039 at VGS = - 10 V - 60 COMPLIANT - 30 78 nC 100 % Rg Tested 0.0062 at VGS = - 4.5 V - 60 APPLICATIONS PowerPAK SO-8 Notebook - Load Switch S S 6.15 mm 5.15 mm 1 S 2 ... See More ⇒

 9.1. Size:339K  vishay
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SI7135DP

New Product Si7137DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.00195 at VGS = - 10 V - 60d TrenchFET Gen III P-Channel Power MOSFET - 20 0.0025 at VGS = - 4.5 V - 60d 183 nC 100 % Rg Tested 0.0039 at VGS = - 2.5 V - 60d 100 % UIS Tested... See More ⇒

 9.2. Size:482K  vishay
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SI7135DP

Si7138DP Vishay Siliconix N-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0078 at VGS = 10 V 30 Low Thermal Resistance PowerPAK Package 60 55 0.009 at VGS = 6 V 30 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/... See More ⇒

 9.3. Size:482K  vishay
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SI7135DP

Si7136DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0032 at VGS = 10 V 30 Ultra-Low On-Resistance Using High 20 24.5 Density TrenchFET Gen II Power 0.0045 at VGS = 4.5 V 30 MOSFET Technology PowerPAK SO-8 Qg Optimized 100 % Rg Tested ... See More ⇒

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Detailed specifications: SI7115DN, SI7116DN, SI7117DN, SI7120ADN, SI7120DN, SI7121ADN, SI7121DN, SI7123DN, IRLB3034, SI7136DP, SI7137DP, SI7138DP, SI7139DP, SI7141DP, SI7143DP, SI7145DP, SI7148DP

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