SI7135DP - параметры транзистора MOSFET, его аналоги, datasheet

SI7135DP Datasheet (PDF)

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New ProductSi7135DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0039 at VGS = - 10 V - 60COMPLIANT - 30 78 nC 100 % Rg Tested0.0062 at VGS = - 4.5 V - 60APPLICATIONSPowerPAK SO-8 Notebook- Load SwitchSS6.15 mm 5.15 mm1S2

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New ProductSi7137DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition 0.00195 at VGS = - 10 V- 60d TrenchFET Gen III P-Channel Power MOSFET- 20 0.0025 at VGS = - 4.5 V- 60d 183 nC 100 % Rg Tested0.0039 at VGS = - 2.5 V - 60d 100 % UIS Tested

9.2. Size:482K vishay
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Si7138DPVishay SiliconixN-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0078 at VGS = 10 V 30 Low Thermal Resistance PowerPAK Package60 550.009 at VGS = 6 V 30 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/

9.3. Size:482K vishay
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Si7136DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0032 at VGS = 10 V 30 Ultra-Low On-Resistance Using High20 24.5Density TrenchFET Gen II Power0.0045 at VGS = 4.5 V 30MOSFET TechnologyPowerPAK SO-8 Qg Optimized 100 % Rg Tested