All MOSFET. SI7157DP Datasheet

 

SI7157DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7157DP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 46.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 415 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 2470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: POWERPAK-SO-8

 SI7157DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7157DP Datasheet (PDF)

 ..1. Size:324K  vishay
si7157dp.pdf

SI7157DP
SI7157DP

Si7157DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0016 at VGS = - 10 V - 60d Material categorization:For definitions of compliance please see- 20 0.0020 at VGS = - 4.5 V - 60d 202.5 nCwww.vishay.com/doc?999120.0032 at VGS

 9.1. Size:505K  vishay
si7159dn.pdf

SI7157DP
SI7157DP

New ProductSi7159DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.007 at VGS = - 10 V - 30d 100% Rg TestedRoHS- 30 63 nCCOMPLIANT 100% UIS Tested0.0105 at VGS = - 4.5 V - 30dPowerPAK SO-8APPLICATIONS Notebook Battery ChargingS Notebook

 9.2. Size:584K  vishay
si7153dn.pdf

SI7157DP
SI7157DP

Si7153DNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen. III P-Channel power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg and UIS tested0.0095 at VGS = -10 V -18 a Material categorization:-30 0.0120 at VGS = -6 V -18 a 31 nCFor definitions of compliance please see0.0150 at VGS = -4.5 V -18 awww.vi

 9.3. Size:479K  vishay
si7156dp.pdf

SI7157DP
SI7157DP

Si7156DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0035 at VGS = 10 V 50 TrenchFET Power MOSFET40 45 nC0.0047 at VGS = 4.5 V 50 100 % Rg Tested 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Synchronous RectificationS6.

 9.4. Size:508K  vishay
si7159dp.pdf

SI7157DP
SI7157DP

New ProductSi7159DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.007 at VGS = - 10 V - 30d 100% Rg TestedRoHS- 30 63 nCCOMPLIANT 100% UIS Tested0.0105 at VGS = - 4.5 V - 30dPowerPAK SO-8APPLICATIONS Notebook Battery ChargingS Notebook

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