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SI7170DP Spec and Replacement


   Type Designator: SI7170DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 595 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: POWERPAK-SO-8
 

 SI7170DP substitution

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SI7170DP Specs

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SI7170DP

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SI7170DP

New Product Si7174DP Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 0.007 at VGS = 10 V 75 47.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch Synchronous Rectification S 6.15 mm 5.15 ... See More ⇒

 9.2. Size:479K  vishay
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SI7170DP

New Product Si7178DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.014 at VGS = 10 V 100 47.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch POL S 6.15 mm 5.15 mm Intermediate... See More ⇒

 9.3. Size:508K  vishay
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SI7170DP

New Product Si7172DP Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)g Qg (Typ.) TrenchFET Power MOSFET 0.070 at VGS = 10 V 25 Low Thermal Resistance PowerPAK Package RoHS 200 34 0.076 at VGS = 6 V 24 COMPLIANT 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Pri... See More ⇒

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Detailed specifications: SI7148DP , SI7149ADP , SI7149DP , SI7156DP , SI7157DP , SI7159DP , SI7160DP , SI7164DP , IRF740 , SI7172DP , SI7174DP , SI7178DP , SI7186DP , SI7190DP , SI7192DP , SI7194DP , SI7196DP .

Keywords - SI7170DP MOSFET specs

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