SI7178DP Specs and Replacement
Type Designator: SI7178DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: POWERPAK-SO-8
SI7178DP substitution
SI7178DP Specs
si7178dp.pdf
New Product Si7178DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.014 at VGS = 10 V 100 47.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch POL S 6.15 mm 5.15 mm Intermediate... See More ⇒
si7174dp.pdf
New Product Si7174DP Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 0.007 at VGS = 10 V 75 47.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch Synchronous Rectification S 6.15 mm 5.15 ... See More ⇒
si7172dp.pdf
New Product Si7172DP Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)g Qg (Typ.) TrenchFET Power MOSFET 0.070 at VGS = 10 V 25 Low Thermal Resistance PowerPAK Package RoHS 200 34 0.076 at VGS = 6 V 24 COMPLIANT 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Pri... See More ⇒
Detailed specifications: SI7156DP , SI7157DP , SI7159DP , SI7160DP , SI7164DP , SI7170DP , SI7172DP , SI7174DP , IRF540N , SI7186DP , SI7190DP , SI7192DP , SI7194DP , SI7196DP , SI7212DN , SI7216DN , SI7220DN .
Keywords - SI7178DP MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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