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SI7288DP Specs and Replacement


   Type Designator: SI7288DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: POWERPAK-SO-8
 

 SI7288DP substitution

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SI7288DP Specs

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SI7288DP

New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.019 at VGS = 10 V 20 TrenchFET Gen III Power MOSFET 40 4.9 0.022 at VGS = 4.5 V 19 PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 20... See More ⇒

Detailed specifications: SI7228DN , SI7230DN , SI7232DN , SI7234DP , SI7236DP , SI7252DP , SI7270DP , SI7272DP , 8205A , SI7302DN , SI7308DN , SI7309DN , SI7315DN , SI7317DN , SI7322DN , SI7326DN , SI7328DN .

History: IRFH7194 | NTTFS4824NTAG

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