SI7288DP Datasheet and Replacement
Type Designator: SI7288DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: POWERPAK-SO-8
SI7288DP substitution
SI7288DP Datasheet (PDF)
si7288dp.pdf

New ProductSi7288DPVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition 0.019 at VGS = 10 V 20 TrenchFET Gen III Power MOSFET40 4.90.022 at VGS = 4.5 V 19 PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 20
Datasheet: SI7228DN , SI7230DN , SI7232DN , SI7234DP , SI7236DP , SI7252DP , SI7270DP , SI7272DP , 2SK3878 , SI7302DN , SI7308DN , SI7309DN , SI7315DN , SI7317DN , SI7322DN , SI7326DN , SI7328DN .
History: FHF6N90A | SRT03N011L | SSF7NS65UF | NTTFS010N10MCL | RD3P050SN | FHF730A | IPN60R360P7S
Keywords - SI7288DP MOSFET datasheet
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History: FHF6N90A | SRT03N011L | SSF7NS65UF | NTTFS010N10MCL | RD3P050SN | FHF730A | IPN60R360P7S



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