SI7302DN Specs and Replacement
Type Designator: SI7302DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 220 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: POWERPAK-1212-8
SI7302DN substitution
SI7302DN Specs
si7302dn.pdf
Si7302DN Vishay Siliconix N-Channel 220-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.320 at VGS = 10 V 8.4 TrenchFET Power MOSFET 220 9.1 nC 0.340 at VGS = 6 V 8.2 100 % Rg Tested APPLICATIONS PowerPAK 1212-8 Primary Side Switching S D 3.30 mm 3.30 mm 1 S 2 S... See More ⇒
si7308dn.pdf
Si7308DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.058 at VGS = 10 V 6 TrenchFET Power MOSFET 60 13 nC 0.072 at VGS = 4.5 V 6 Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS ... See More ⇒
si7309dn.pdf
Si7309DN Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.115 at VGS = - 10 V - 8 TrenchFET Power MOSFET - 60 14.5 nC 0.146 at VGS = - 4.5 V - 8 Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile APPLICATIONS PowerPAK ... See More ⇒
Detailed specifications: SI7230DN , SI7232DN , SI7234DP , SI7236DP , SI7252DP , SI7270DP , SI7272DP , SI7288DP , 7N65 , SI7308DN , SI7309DN , SI7315DN , SI7317DN , SI7322DN , SI7326DN , SI7328DN , SI7336ADP .
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