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SI7322DN Specs and Replacement


   Type Designator: SI7322DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: POWERPAK-1212-8
 

 SI7322DN substitution

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SI7322DN Specs

 ..1. Size:542K  vishay
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SI7322DN

New Product Si7322DN Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 100 % UIS Tested 0.058 at VGS = 10 V 100 18 13 nC RoHS COMPLIANT APPLICATIONS PowerPAK 1212-8 Primary Switch Isolated DC/DC Converters S 3.30 mm 3.30 mm 1 D S ... See More ⇒

 9.1. Size:573K  vishay
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SI7322DN

New Product Si7328DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0066 at VGS = 10 V 35 COMPLIANT 30 21 nC Low Thermal Resistance PowerPAK 0.0076 at VGS = 4.5 V 35 Package with Small Size and Low 1.07 mm Profile 100 % Rg Tested ... See More ⇒

 9.2. Size:532K  vishay
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SI7322DN

Si7326DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0195 at VGS = 10 V 10 TrenchFET Power MOSFET 30 0.030 at VGS = 4.5 V 8 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK 1212-8 APPLI... See More ⇒

Detailed specifications: SI7270DP , SI7272DP , SI7288DP , SI7302DN , SI7308DN , SI7309DN , SI7315DN , SI7317DN , 2SK3878 , SI7326DN , SI7328DN , SI7336ADP , SI7342DP , SI7344DP , SI7356ADP , SI7358ADP , SI7366DP .

History: 2SJ190 | SI7326DN | IPB050N06NG

Keywords - SI7322DN MOSFET specs

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