SI7336ADP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7336ADP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 860
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package:
POWERPAK-SO-8
SI7336ADP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7336ADP
Datasheet (PDF)
..1. Size:461K vishay
si7336adp.pdf
Si7336ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableRDS(on) ()ID (A) Qg (Typ.)VDS (V) Ultra-Low On-Resistance Using High RoHS0.0030 at VGS = 10 V 30Density TrenchFET Gen II Power COMPLIANT 30 36MOSFET Technology0.0040 at VGS = 4.5 V 27 Qg Optimized New Low Thermal Resistance PowerPAK Packag
6.1. Size:458K vishay
si7336ad.pdf
Si7336ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableRDS(on) ()ID (A) Qg (Typ.)VDS (V) Ultra-Low On-Resistance Using High RoHS0.0030 at VGS = 10 V 30Density TrenchFET Gen II Power COMPLIANT 30 36MOSFET Technology0.0040 at VGS = 4.5 V 27 Qg Optimized New Low Thermal Resistance PowerPAK Packag
8.1. Size:67K vishay
si7336dp.pdf
Si7336DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESD Ultra-Low On-Resistance Using High DensityPRODUCT SUMMARYTrenchFETr Gen II Power MOSFET TechnologyD Qg OptimizedVDS (V) rDS(on) (W) ID (A) Qg (Typ)D New Low Thermal Resistance PowerPAKr Package0.00325 @ VGS = 10 V 30with Low 1.07-mm Profile30 3630 360.0042 @ VGS = 4.5 V 27 D 100% Rg TestedAPPLICATIONSD
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