SI7336ADP Datasheet. Specs and Replacement

Type Designator: SI7336ADP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 860 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: POWERPAK-SO-8

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SI7336ADP datasheet

 ..1. Size:461K  vishay
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SI7336ADP

Si7336ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available RDS(on) ( )ID (A) Qg (Typ.) VDS (V) Ultra-Low On-Resistance Using High RoHS 0.0030 at VGS = 10 V 30 Density TrenchFET Gen II Power COMPLIANT 30 36 MOSFET Technology 0.0040 at VGS = 4.5 V 27 Qg Optimized New Low Thermal Resistance PowerPAK Packag... See More ⇒

 6.1. Size:458K  vishay
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SI7336ADP

Si7336ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available RDS(on) ( )ID (A) Qg (Typ.) VDS (V) Ultra-Low On-Resistance Using High RoHS 0.0030 at VGS = 10 V 30 Density TrenchFET Gen II Power COMPLIANT 30 36 MOSFET Technology 0.0040 at VGS = 4.5 V 27 Qg Optimized New Low Thermal Resistance PowerPAK Packag... See More ⇒

 8.1. Size:67K  vishay
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SI7336ADP

Si7336DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D Ultra-Low On-Resistance Using High Density PRODUCT SUMMARY TrenchFETr Gen II Power MOSFET Technology D Qg Optimized VDS (V) rDS(on) (W) ID (A) Qg (Typ) D New Low Thermal Resistance PowerPAKr Package 0.00325 @ VGS = 10 V 30 with Low 1.07-mm Profile 30 36 30 36 0.0042 @ VGS = 4.5 V 27 D 100% Rg Tested APPLICATIONS D ... See More ⇒

Detailed specifications: SI7302DN, SI7308DN, SI7309DN, SI7315DN, SI7317DN, SI7322DN, SI7326DN, SI7328DN, IRF1010E, SI7342DP, SI7344DP, SI7356ADP, SI7358ADP, SI7366DP, SI7368DP, SI7370ADP, SI7370DP

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