SI7374DP Datasheet and Replacement
Type Designator: SI7374DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id| ⓘ - Maximum Drain Current: 23.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 24 nC
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 870 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: POWERPAK-SO-8
SI7374DP substitution
SI7374DP Datasheet (PDF)
si7374dp.pdf

Si7374DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0055 at VGS = 10 V 24 TrenchFET Power MOSFET30 36 nC0.0066 at VGS = 4.5 V 24 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY APPLICATIONSVSD (V)VDS (V) IF (A) DC/
si7370adp.pdf

New ProductSi7370ADPVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)b, c Qg (Typ.) TrenchFET Power MOSFETRoHS0.010 at VGS = 10 V 16 100 % Rg Tested COMPLIANT 60 450.0125 at VGS = 6 V 14.4 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 Primary Side Switch for 24 V DC/DC Applications
si7370dp.pdf

Si7370DPVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 15.8 TrenchFET Power MOSFET 60 0.013 at VGS = 6 V 14.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested
Datasheet: SI7342DP , SI7344DP , SI7356ADP , SI7358ADP , SI7366DP , SI7368DP , SI7370ADP , SI7370DP , IRFB3607 , SI7380ADP , SI7382DP , SI7384DP , SI7386DP , SI7388DP , SI7390DP , SI7392ADP , SI7392DP .
Keywords - SI7374DP MOSFET datasheet
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