All MOSFET. SI7439DP Datasheet

 

SI7439DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7439DP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 46 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: POWERPAK-SO-8

 SI7439DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7439DP Datasheet (PDF)

 ..1. Size:482K  vishay
 si7439dp.pdf

SI7439DP SI7439DP

Si7439DPVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = - 10 V - 5.2 TrenchFET Power MOSFETs- 1500.095 at VGS = - 6 V Ultra-Low On-Resistance Critical for Application- 5.0 Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profi

 9.1. Size:467K  vishay
 si7434dp.pdf

SI7439DP SI7439DP

Si7434DPVishay SiliconixN-Channel 250-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.155 at VGS = 10 V 3.8 PWM-OptimizedTrenchFET Power MOSFET2500.162 at VGS = 6 V 100 % Rg Tested3.7 Avalanche Tested APPLICATIONS Primary Side Switch In:D - Telecom Power SuppliesPower

 9.2. Size:486K  vishay
 si7430dp.pdf

SI7439DP SI7439DP

Si7430DPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.045 at VGS = 10 V 26 Extremely Low Qgd for Reduced dV/dt, Qgd and150 23 nCShoot-Through0.047 at VGS = 8 V 25 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8 Compliant to RoHS

 9.3. Size:493K  vishay
 si7431dp.pdf

SI7439DP SI7439DP

Si7431DPVishay SiliconixP-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.174 at VGS = - 10 V - 3.8 TrenchFET Power MOSFETs- 200 880.180 at VGS = - 6 V - 3.6 Ultra-Low On-Resistance Critical for Application Low Thermal Resistance PowerPAK Package with Lo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RUH85120M-C | RU6080L

 

 
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