IRFS351 Specs and Replacement

Type Designator: IRFS351

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 max nS

Cossⓘ - Output Capacitance: 338 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3PF

IRFS351 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFS351 datasheet

 ..1. Size:272K  1
irfs350 irfs351.pdf pdf_icon

IRFS351

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 8.1. Size:187K  1
irfs350.pdf pdf_icon

IRFS351

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 8.2. Size:235K  1
irfs350a.pdf pdf_icon

IRFS351

IRFS350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character... See More ⇒

 8.3. Size:430K  international rectifier
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf pdf_icon

IRFS351

PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S ... See More ⇒

Detailed specifications: IRFS333, IRFS340, IRFS340A, IRFS341, IRFS342, IRFS343, IRFS350, IRFS350A, 50N06, IRFS352, IRFS353, IRFS430, IRFS431, IRFS432, IRFS433, IRFS440, IRFS440A

Keywords - IRFS351 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.