SI7460DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7460DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 16 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: POWERPAK-SO-8
SI7460DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7460DP Datasheet (PDF)
si7460dp.pdf
Si7460DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0096 at VGS = 10 V 18 TrenchFET Power MOSFETs600.012 at VGS = 4.5 V 16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfilePowerPAK SO-8 S6.15 mm 5.15 mm 1S
si7465dp.pdf
Si7465DPVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.064 at VGS = - 10 V - 5 TrenchFET Power MOSFET- 60 26 New Low Thermal Resistance PowerPAK0.080 at VGS = - 4.5 V - 4.5Package with Low 1.07 mm ProfilePowerPAK SO-8 S6.15 mm 5.15 mm 1
si7464dp.pdf
Si7464DPVishay SiliconixN-Channel 200-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.24 at VGS = 10 V 2.8 TrenchFET Power MOSFETs2000.26 at VGS = 6 V 2.7 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized For Fast SwitchingPowe
si7463dp.pdf
Si7463DPVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0092 at VGS = - 10 V - 18.6 TrenchFET Power MOSFETs- 40 New Low Thermal Resistance PowerPAK0.014 at VGS = - 4.5 V - 15Package with Low 1.07 mm Profile Compliant to RoHS Directive 2002/95/EC
si7462dp.pdf
Si7462DPVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.130 at VGS = 10 V 4.1 TrenchFET Power MOSFETs2000.142 at VGS = 6.0 V 3.9 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized For Fast SwitchingPowerPAK SO-8
si7463adp.pdf
New ProductSi7463ADPVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.0100 at VGS = - 10 V - 46 100% Rg and UIS Tested- 40 48.6 nC0.0135 at VGS = - 4.5 V - 40 Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8A
si7461dp.pdf
Si7461DPwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETsVDS (V) RDS(on) ()ID (A) Low thermal resistance PowerPAK package 0.0145 at VGS = -10 V -14.4with low 1.07 mm profile -600.0190 at VGS = -4.5 V -12.6 Material categorization: for definitions of compliance please see AvailablePowerPAK SO-
si7469dp.pdf
Si7469DPVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.025 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 80 55 nC0.029 at VGS = - 4.5 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2S3G4GD8D7D6D5Bottom ViewDOrdering I
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100