All MOSFET. SI7478DP Datasheet

 

SI7478DP Datasheet and Replacement


   Type Designator: SI7478DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: POWERPAK-SO-8
 

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SI7478DP Datasheet (PDF)

 ..1. Size:465K  vishay
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SI7478DP

Si7478DPVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0075 at VGS = 10 V 20 TrenchFET Power MOSFET600.0088 at VGS = 4.5 V New Low Thermal Resistance PowerPAK18.5Package with Low 1.07 mm Profile 100 % Rg TestedPowerPAK SO-8 S6.15 mm 5.15 mm

 0.1. Size:1024K  cn vbsemi
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SI7478DP

SI7478DP-T1www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 2

 9.1. Size:463K  vishay
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SI7478DP

Si7476DPVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0053 at VGS = 10 V 25 TrenchFET Power MOSFET400.0066 at VGS = 4.5 V 23 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfilePowerPAK SO-8 DS6.15 mm 5.15 mm 1S

Datasheet: SI7461DP , SI7462DP , SI7463ADP , SI7463DP , SI7464DP , SI7465DP , SI7469DP , SI7476DP , MMD60R360PRH , SI7483ADP , SI7485DP , SI7489DP , SI7491DP , SI7495DP , SI7540ADP , SI7540DP , SI7601DN .

History: STL60N3LLH5 | BRF8N80 | BRCS3400MC | SEF401002 | AOD474A | DM12N65C-2 | FHP10N65A

Keywords - SI7478DP MOSFET datasheet

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