SI7478DP Datasheet and Replacement
Type Designator: SI7478DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: POWERPAK-SO-8
SI7478DP substitution
SI7478DP Datasheet (PDF)
si7478dp.pdf
Si7478DPVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0075 at VGS = 10 V 20 TrenchFET Power MOSFET600.0088 at VGS = 4.5 V New Low Thermal Resistance PowerPAK18.5Package with Low 1.07 mm Profile 100 % Rg TestedPowerPAK SO-8 S6.15 mm 5.15 mm
si7478dp-t1.pdf
SI7478DP-T1www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 2
si7476dp.pdf
Si7476DPVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0053 at VGS = 10 V 25 TrenchFET Power MOSFET400.0066 at VGS = 4.5 V 23 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfilePowerPAK SO-8 DS6.15 mm 5.15 mm 1S
Datasheet: SI7461DP , SI7462DP , SI7463ADP , SI7463DP , SI7464DP , SI7465DP , SI7469DP , SI7476DP , AON7403 , SI7483ADP , SI7485DP , SI7489DP , SI7491DP , SI7495DP , SI7540ADP , SI7540DP , SI7601DN .
History: IPP77N06S2-12 | SI7489DP | SI7469DP
Keywords - SI7478DP MOSFET datasheet
SI7478DP cross reference
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History: IPP77N06S2-12 | SI7489DP | SI7469DP
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