SI7623DN
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7623DN
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 22.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 117
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 645
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038
Ohm
Package:
POWERPAK-1212-8
SI7623DN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7623DN
Datasheet (PDF)
..1. Size:579K vishay
si7623dn.pdf
New ProductSi7623DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0038 at VGS = - 10 V - 35a Material categorization:0.0053 at VGS = - 4.5 V - 20- 35a 55.5 nCFor definitions of compliance please see0.0090 at VGS = - 2.5 V
9.1. Size:105K vishay
si7621dn.pdf
Si7621DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.090 at VGS = - 4.5 V - 4c TrenchFET Power MOSFET: 2.5 V Rated- 20 3.8 nC0.180 at VGS = - 2.5 V - 4c PowerPAK Package- Low Thermal Resistance- Low 1.07 mm Profile 100 Rg Tested
9.2. Size:126K vishay
si7625dn.pdf
New ProductSi7625DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.007 at VGS = - 10 V - 35d TrenchFET Power MOSFET- 30 39.5 nC 100% Rg Tested0.011 at VGS = - 4.5 V - 35d 100% UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1
9.3. Size:576K vishay
si7629dn.pdf
New ProductSi7629DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0046 at VGS = - 10 V - 35a Material categorization:- 20 0.0062 at VGS = - 4.5 V - 35a 59 nCFor definitions of compliance please see0.0117 at VGS = - 2.5 V - 35awww.v
9.4. Size:559K vishay
si7620dn.pdf
Si7620DNVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.126 at VGS = 10 V 150 13 9.5 nC 100 % Rg TestedRoHSCOMPLIANT 100 % UIS TestedAPPLICATIONSPowerPAK 1212-8 Primary Side SwitchS3.30 mm 3.30 mmD1S2S3G4D8DG7D
Datasheet: WPB4002
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