SI7625DN Datasheet. Specs and Replacement

Type Designator: SI7625DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 452 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: POWERPAK-1212-8

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SI7625DN datasheet

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SI7625DN

New Product Si7625DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.007 at VGS = - 10 V - 35d TrenchFET Power MOSFET - 30 39.5 nC 100% Rg Tested 0.011 at VGS = - 4.5 V - 35d 100% UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1... See More ⇒

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SI7625DN

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SI7625DN

New Product Si7623DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0038 at VGS = - 10 V - 35a Material categorization 0.0053 at VGS = - 4.5 V - 20 - 35a 55.5 nC For definitions of compliance please see 0.0090 at VGS = - 2.5 V... See More ⇒

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SI7625DN

New Product Si7629DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0046 at VGS = - 10 V - 35a Material categorization - 20 0.0062 at VGS = - 4.5 V - 35a 59 nC For definitions of compliance please see 0.0117 at VGS = - 2.5 V - 35a www.v... See More ⇒

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Detailed specifications: SI7613DN, SI7615ADN, SI7615DN, SI7617DN, SI7619DN, SI7620DN, SI7621DN, SI7623DN, IRFP460, SI7629DN, SI7633DP, SI7634BDP, SI7635DP, SI7636DP, SI7655ADN, SI7655DN, SI7658ADP

Keywords - SI7625DN MOSFET specs

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