SI7658ADP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7658ADP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 810
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022
Ohm
Package:
POWERPAK-SO-8
SI7658ADP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7658ADP
Datasheet (PDF)
..1. Size:508K vishay
si7658adp.pdf 
New ProductSi7658ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0022 at VGS = 10 V 60gCOMPLIANT 100 % Rg Tested30 34 nC0.0028 at VGS = 4.5 V 60g 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Low-Side Switch for DC/D
6.1. Size:505K vishay
si7658ad.pdf
New ProductSi7658ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0022 at VGS = 10 V 60gCOMPLIANT 100 % Rg Tested30 34 nC0.0028 at VGS = 4.5 V 60g 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Low-Side Switch for DC/D
8.1. Size:94K vishay
si7658dp.pdf
Si7658DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS0.0024 at VGS = 10 V 60gCOMPLIANT 100 % Rg Tested30 48.5 nC0.00325 at VGS = 4.5 V 60g 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Low-side Switch for DC/DC ConvertersS
9.1. Size:90K vishay
si7652dp.pdf
Si7652DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 15 TrenchFET Power MOSFETs300.030 at VGS = 4.5 V 12 High-Efficient PWM Optimized 100 % Rg and UIS TestedPowerPAK SO-8DS6.15 mm 5.15 mm1S2S3G
9.2. Size:225K vishay
si7655adn.pdf
Si7655ADNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAKPackage with Small Size and Low 0.75 mm 0.0036 at VGS = - 10 V - 40eProfile- 20 0.0048 at VGS = - 4.5 V - 40e 72 nC 100 % Rg and UIS Tested0.0090 at VGS = - 2.5 V - 40e Materia
9.3. Size:215K vishay
si7655dn.pdf
New ProductSi7655DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAKPackage with Small Size and Low 0.75 mm 0.0036 at VGS = - 10 V - 40eProfile- 20 0.0048 at VGS = - 4.5 V - 40e 72 nC 100 % Rg and UIS Tested0.0085 at VGS = - 2.5 V - 40e
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