All MOSFET. SI7703EDN Datasheet

 

SI7703EDN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7703EDN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 4 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: POWERPAK-1212-8

 SI7703EDN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7703EDN Datasheet (PDF)

 ..1. Size:570K  vishay
 si7703edn.pdf

SI7703EDN SI7703EDN

Si7703EDNVishay SiliconixSingle P-Channel 20 V (D-S) MOSFET With Schottky DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) RDS(on) ()ID (A) ESD Protected: 4500 V Ultra-Low Thermal Resistance, PowerPAK0.048 at VGS = - 4.5 V - 6.3Package with Low 1.07 mm Profile0.068 at VGS = - 2.5 V - 20 - 5.3 Material categorization:0

 9.1. Size:96K  vishay
 si7705dn.pdf

SI7703EDN SI7703EDN

Si7705DNVishay SiliconixSingle P-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 1.8 V Rated0.048 at VGS = - 4.5 V - 6.3 Ultra-Low Thermal Resistance, PowerPAKRoHSCOMPLIANTPackage with Low 1.07 mm Profile0.068 at VGS = - 2.5 V - 20 - 5.30.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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