All MOSFET. SI7703EDN Datasheet

 

SI7703EDN Datasheet and Replacement


   Type Designator: SI7703EDN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: POWERPAK-1212-8
 

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SI7703EDN Datasheet (PDF)

 ..1. Size:570K  vishay
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SI7703EDN

Si7703EDNVishay SiliconixSingle P-Channel 20 V (D-S) MOSFET With Schottky DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) RDS(on) ()ID (A) ESD Protected: 4500 V Ultra-Low Thermal Resistance, PowerPAK0.048 at VGS = - 4.5 V - 6.3Package with Low 1.07 mm Profile0.068 at VGS = - 2.5 V - 20 - 5.3 Material categorization:0

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SI7703EDN

Si7705DNVishay SiliconixSingle P-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 1.8 V Rated0.048 at VGS = - 4.5 V - 6.3 Ultra-Low Thermal Resistance, PowerPAKRoHSCOMPLIANTPackage with Low 1.07 mm Profile0.068 at VGS = - 2.5 V - 20 - 5.30.

Datasheet: SI7655ADN , SI7655DN , SI7658ADP , SI7664DP , SI7668ADP , SI7674DP , SI7682DP , SI7686DP , 2SK3878 , SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP , SI7748DP , SI7758DP .

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