SI7703EDN Datasheet. Specs and Replacement
Type Designator: SI7703EDN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: POWERPAK-1212-8
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SI7703EDN substitution
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SI7703EDN datasheet
si7703edn.pdf
Si7703EDN Vishay Siliconix Single P-Channel 20 V (D-S) MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8 V Rated VDS (V) RDS(on) ( )ID (A) ESD Protected 4500 V Ultra-Low Thermal Resistance, PowerPAK 0.048 at VGS = - 4.5 V - 6.3 Package with Low 1.07 mm Profile 0.068 at VGS = - 2.5 V - 20 - 5.3 Material categorization 0... See More ⇒
si7705dn.pdf
Si7705DN Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETS 1.8 V Rated 0.048 at VGS = - 4.5 V - 6.3 Ultra-Low Thermal Resistance, PowerPAK RoHS COMPLIANT Package with Low 1.07 mm Profile 0.068 at VGS = - 2.5 V - 20 - 5.3 0.... See More ⇒
Detailed specifications: SI7655ADN, SI7655DN, SI7658ADP, SI7664DP, SI7668ADP, SI7674DP, SI7682DP, SI7686DP, IRF9540, SI7716ADN, SI7718DN, SI7720DN, SI7726DN, SI7738DP, SI7742DP, SI7748DP, SI7758DP
Keywords - SI7703EDN MOSFET specs
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