SI7716ADN Datasheet. Specs and Replacement
Type Designator: SI7716ADN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: POWERPAK-1212-8
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SI7716ADN substitution
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SI7716ADN datasheet
si7716adn.pdf
New Product Si7716ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET 0.0135 at VGS = 10 V 16 100 % Rg Tested RoHS 30 7.3 nC COMPLIANT 100 % UIS Tested 0.0165 at VGS = 4.5 V 16 APPLICATIONS PowerPAK 1212-8 DC/DC Conversion - System Pow... See More ⇒
si7716ad.pdf
New Product Si7716ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET 0.0135 at VGS = 10 V 16 100 % Rg Tested RoHS 30 7.3 nC COMPLIANT 100 % UIS Tested 0.0165 at VGS = 4.5 V 16 APPLICATIONS PowerPAK 1212-8 DC/DC Conversion - System Pow... See More ⇒
si7718dn.pdf
New Product Si7718DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) TrenchFET Power MOSFET RoHS 0.006 at VGS = 10 V 35g PWM Optimized COMPLIANT 30 13.7 nC 100 % Rg Tested 0.0082 at VGS = 4.5 V 35g 100 % UIS Tested PowerPAK 1212-8 APPLICATIONS High Side Switch - VR... See More ⇒
Detailed specifications: SI7655DN, SI7658ADP, SI7664DP, SI7668ADP, SI7674DP, SI7682DP, SI7686DP, SI7703EDN, 7N65, SI7718DN, SI7720DN, SI7726DN, SI7738DP, SI7742DP, SI7748DP, SI7758DP, SI7772DP
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
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