SI7718DN
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7718DN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 18.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 335
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
POWERPAK-1212-8
SI7718DN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7718DN
Datasheet (PDF)
..1. Size:548K vishay
si7718dn.pdf
New ProductSi7718DNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFETRoHS 0.006 at VGS = 10 V 35g PWM OptimizedCOMPLIANT 30 13.7 nC 100 % Rg Tested0.0082 at VGS = 4.5 V 35g 100 % UIS TestedPowerPAK 1212-8APPLICATIONS High Side Switch- VR
9.1. Size:546K vishay
si7716ad.pdf
New ProductSi7716ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0135 at VGS = 10 V 16 100 % Rg TestedRoHS30 7.3 nCCOMPLIANT 100 % UIS Tested0.0165 at VGS = 4.5 V 16APPLICATIONSPowerPAK 1212-8 DC/DC Conversion- System Pow
9.2. Size:537K vishay
si7716adn.pdf
New ProductSi7716ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0135 at VGS = 10 V 16 100 % Rg TestedRoHS30 7.3 nCCOMPLIANT 100 % UIS Tested0.0165 at VGS = 4.5 V 16APPLICATIONSPowerPAK 1212-8 DC/DC Conversion- System Pow
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