SI7718DN MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7718DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 18.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 335 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: POWERPAK-1212-8
SI7718DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7718DN Datasheet (PDF)
si7718dn.pdf
New ProductSi7718DNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFETRoHS 0.006 at VGS = 10 V 35g PWM OptimizedCOMPLIANT 30 13.7 nC 100 % Rg Tested0.0082 at VGS = 4.5 V 35g 100 % UIS TestedPowerPAK 1212-8APPLICATIONS High Side Switch- VR
si7716ad.pdf
New ProductSi7716ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0135 at VGS = 10 V 16 100 % Rg TestedRoHS30 7.3 nCCOMPLIANT 100 % UIS Tested0.0165 at VGS = 4.5 V 16APPLICATIONSPowerPAK 1212-8 DC/DC Conversion- System Pow
si7716adn.pdf
New ProductSi7716ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0135 at VGS = 10 V 16 100 % Rg TestedRoHS30 7.3 nCCOMPLIANT 100 % UIS Tested0.0165 at VGS = 4.5 V 16APPLICATIONSPowerPAK 1212-8 DC/DC Conversion- System Pow
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F