SI7720DN Datasheet. Specs and Replacement

Type Designator: SI7720DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: POWERPAK-1212-8

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SI7720DN datasheet

 ..1. Size:549K  vishay
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SI7720DN

Si7720DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) SkyFET Monolithic TrenchFET Power 0.0125 at VGS = 10 V 12 MOSFET and Schottky Diode 30 13.7 nC RoHS 0.015 at VGS = 4.5 V 12 COMPLIANT Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 ... See More ⇒

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SI7720DN

Si7726DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) SkyFET Monolithic TrenchFET Power RoHS 0.0095 at VGS = 10 V 35 MOSFET and Schottky Diode COMPLIANT 30 12.5 nC 0.0125 at VGS = 4.5 V 35 Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07... See More ⇒

Detailed specifications: SI7664DP, SI7668ADP, SI7674DP, SI7682DP, SI7686DP, SI7703EDN, SI7716ADN, SI7718DN, IRFP250N, SI7726DN, SI7738DP, SI7742DP, SI7748DP, SI7758DP, SI7772DP, SI7774DP, SI7784DP

Keywords - SI7720DN MOSFET specs

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