SI7748DP Datasheet. Specs and Replacement

Type Designator: SI7748DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 575 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: POWERPAK-SO-8

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SI7748DP datasheet

 ..1. Size:157K  vishay
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SI7748DP

New Product Si7748DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) SkyFET Monolithic TrenchFET RoHS 0.0048 at VGS = 10 V 50 Power MOSFET and Schottky Diode COMPLIANT 30 27.8 nC 0.0066 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8... See More ⇒

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SI7748DP

Si7742DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0035 at VGS = 10 V 60 SkyFET Monolithic TrenchFET 30 34 nC 0.0045 at VGS = 4.5 V Power MOSFET and Schottky Diode 60 100 % Rg Tested 100 % UIS Tested PowerPAK ... See More ⇒

Detailed specifications: SI7686DP, SI7703EDN, SI7716ADN, SI7718DN, SI7720DN, SI7726DN, SI7738DP, SI7742DP, AON7408, SI7758DP, SI7772DP, SI7774DP, SI7784DP, SI7788DP, SI7790DP, SI7792DP, SI7794DP

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