SI7772DP Specs and Replacement

Type Designator: SI7772DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: POWERPAK-SO-8

SI7772DP substitution

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SI7772DP datasheet

 ..1. Size:158K  vishay
 si7772dp.pdf pdf_icon

SI7772DP

New Product Si7772DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.013 at VGS = 10 V 35.6a SkyFET Monolithic TrenchFET Gen III 30 8.3 nC 0.0165 at VGS = 4.5 V 31.6 Power MOSFET and Schottky Diode 100 % Rg Tested 10... See More ⇒

 9.1. Size:184K  vishay
 si7774dp.pdf pdf_icon

SI7772DP

New Product Si7774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0038 at VGS = 10 V 60 SkyFET Monolithic TrenchFET 30 21.5 nC Power MOSFET and Schottky Diode 0.0047 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS T... See More ⇒

Detailed specifications: SI7716ADN, SI7718DN, SI7720DN, SI7726DN, SI7738DP, SI7742DP, SI7748DP, SI7758DP, IRF9540N, SI7774DP, SI7784DP, SI7788DP, SI7790DP, SI7792DP, SI7794DP, SI7802DN, SI7804DN

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