All MOSFET. SI7772DP Datasheet

 

SI7772DP Datasheet and Replacement


   Type Designator: SI7772DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: POWERPAK-SO-8
 

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SI7772DP Datasheet (PDF)

 ..1. Size:158K  vishay
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SI7772DP

New ProductSi7772DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.013 at VGS = 10 V 35.6a SkyFET Monolithic TrenchFET Gen III 30 8.3 nC0.0165 at VGS = 4.5 V 31.6Power MOSFET and Schottky Diode 100 % Rg Tested 10

 9.1. Size:184K  vishay
si7774dp.pdf pdf_icon

SI7772DP

New ProductSi7774DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0038 at VGS = 10 V 60 SkyFET Monolithic TrenchFET 30 21.5 nCPower MOSFET and Schottky Diode0.0047 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS T

Datasheet: SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP , SI7748DP , SI7758DP , IRF1010E , SI7774DP , SI7784DP , SI7788DP , SI7790DP , SI7792DP , SI7794DP , SI7802DN , SI7804DN .

History: MSF10N80A | 2SK1928 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B | AUIRFP4227

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