SI7774DP Datasheet and Replacement
Type Designator: SI7774DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: POWERPAK-SO-8
SI7774DP substitution
SI7774DP Datasheet (PDF)
si7774dp.pdf

New ProductSi7774DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0038 at VGS = 10 V 60 SkyFET Monolithic TrenchFET 30 21.5 nCPower MOSFET and Schottky Diode0.0047 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS T
si7772dp.pdf

New ProductSi7772DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.013 at VGS = 10 V 35.6a SkyFET Monolithic TrenchFET Gen III 30 8.3 nC0.0165 at VGS = 4.5 V 31.6Power MOSFET and Schottky Diode 100 % Rg Tested 10
Datasheet: SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP , SI7748DP , SI7758DP , SI7772DP , 2N7000 , SI7784DP , SI7788DP , SI7790DP , SI7792DP , SI7794DP , SI7802DN , SI7804DN , SI7806ADN .
Keywords - SI7774DP MOSFET datasheet
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History: P2503BDG | SFF140-28



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