SI7820DN Specs and Replacement

Type Designator: SI7820DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: POWERPAK-1212-8

SI7820DN substitution

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SI7820DN datasheet

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SI7820DN

Si7820DN Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.240 at VGS = 10 V 2.6 PWM-Optimized TrenchFET Power MOSFET 200 12.1 0.250 at VGS = 6 V 2.5 100 % Rg Tested Avalanche Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212... See More ⇒

Detailed specifications: SI7792DP, SI7794DP, SI7802DN, SI7804DN, SI7806ADN, SI7810DN, SI7812DN, SI7818DN, 5N65, SI7840BDP, SI7846DP, SI7848BDP, SI7848DP, SI7850DP, SI7852ADP, SI7852DP, SI7856ADP

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