All MOSFET. SI7820DN Datasheet

 

SI7820DN Datasheet and Replacement


   Type Designator: SI7820DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: POWERPAK-1212-8
 

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SI7820DN Datasheet (PDF)

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SI7820DN

Si7820DNVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.240 at VGS = 10 V 2.6 PWM-Optimized TrenchFET Power MOSFET200 12.10.250 at VGS = 6 V 2.5 100 % Rg Tested Avalanche Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212

Datasheet: SI7792DP , SI7794DP , SI7802DN , SI7804DN , SI7806ADN , SI7810DN , SI7812DN , SI7818DN , 5N65 , SI7840BDP , SI7846DP , SI7848BDP , SI7848DP , SI7850DP , SI7852ADP , SI7852DP , SI7856ADP .

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