SI7911DN Specs and Replacement

Type Designator: SI7911DN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: POWERPAK-1212-8

SI7911DN substitution

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SI7911DN datasheet

 ..1. Size:543K  vishay
 si7911dn.pdf pdf_icon

SI7911DN

Si7911DN Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETS 1.8 V Rated 0.051 at VGS = - 4.5 V - 5.7 New Low Thermal Resistance PowerPAK RoHS COMPLIANT 0.067 at VGS = - 2.5 V - 20 - 5.0 Package 0.094 at VGS = - 1.8 V - 4.2 APPLICATIONS Portable... See More ⇒

 9.1. Size:543K  vishay
 si7913dn.pdf pdf_icon

SI7911DN

Si7913DN Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.037 at VGS = - 4.5 V - 7.4 TrenchFET Power MOSFET 0.048 at VGS = - 2.5 V - 20 - 6.5 New Low Thermal Resistance PowerPAK 0.066 at VGS = - 1.8 V - 55 Package APPLICATIONS Portable PowerP... See More ⇒

Detailed specifications: SI7880ADP, SI7882DP, SI7884BDP, SI7886ADP, SI7888DP, SI7892BDP, SI7904BDN, SI7905DN, IRF520, SI7913DN, SI7922DN, SI7923DN, SI7938DP, SI7942DP, SI7945DP, SI7946ADP, SI7946DP

Keywords - SI7911DN MOSFET specs

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