SI7923DN Specs and Replacement

Type Designator: SI7923DN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: POWERPAK-1212-8

SI7923DN substitution

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SI7923DN datasheet

 ..1. Size:543K  vishay
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SI7923DN

Si7923DN Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.047 at VGS = - 10 V - 6.4 TrenchFET Power MOSFET - 30 0.075 at VGS = - 4.5 V - 5 New Low Thermal Resistance PowerPAK Package APPLICATIONS Portable PowerPAK 1212-8 - Battery Switch - L... See More ⇒

 9.1. Size:563K  vishay
 si7925dn.pdf pdf_icon

SI7923DN

Si7925DN Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 1.8 V Rated 0.042 at VGS = - 4.5 V - 6.5 RoHS 0.058 at VGS = - 2.5 V - 12 - 5.5 COMPLIANT APPLICATIONS 0.082 at VGS = - 1.8 V - 1.2 Load Switch PA Switch Battery Switch Bi-Dire... See More ⇒

 9.2. Size:543K  vishay
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SI7923DN

Si7922DN Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.195 at VGS = 10 V 2.5 New Low Thermal Resistance PowerPAK RoHS 100 COMPLIANT Package, 1/3 the Space of An SO-8 While 0.230 at VGS = 6 V 2.3 Thermally Comparable PWM Optimized APPLICATIO... See More ⇒

Detailed specifications: SI7886ADP, SI7888DP, SI7892BDP, SI7904BDN, SI7905DN, SI7911DN, SI7913DN, SI7922DN, IRFZ24N, SI7938DP, SI7942DP, SI7945DP, SI7946ADP, SI7946DP, SI7949DP, SI7956DP, SI7960DP

Keywords - SI7923DN MOSFET specs

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