IRFS450
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS450
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 151(max)
nC
trⓘ - Rise Time: 50(max)
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO3PF
IRFS450
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS450
Datasheet (PDF)
0.1. Size:233K 1
irfs450a.pdf
IRFS450AFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.6 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte
0.2. Size:687K fairchild semi
irfs450b.pdf
November 2001IRFS450B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 87 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast
0.3. Size:238K inchange semiconductor
irfs450a.pdf
isc N-Channel MOSFET Transistor IRFS450AFEATURESAvalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose appl
Datasheet: IRFS431
, IRFS432
, IRFS433
, IRFS440
, IRFS440A
, IRFS441
, IRFS442
, IRFS443
, P55NF06
, IRFS450A
, IRFS451
, IRFS452
, IRFS453
, IRFS510A
, IRFS520
, IRFS520A
, IRFS521
.