SI8457DB Specs and Replacement

Type Designator: SI8457DB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 715 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: MICRO-FOOT-1.6X1.6

SI8457DB substitution

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SI8457DB datasheet

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SI8457DB

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SI8457DB

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Detailed specifications: SI8425DB, SI8429DB, SI8435DB, SI8439DB, SI8441DB, SI8445DB, SI8447DB, SI8451DB, IRFZ44, SI8461DB, SI8465DB, SI8466EDB, SI8467DB, SI8469DB, SI8472DB, SI8473EDB, SI8475EDB

Keywords - SI8457DB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs