SI8469DB Datasheet. Specs and Replacement

Type Designator: SI8469DB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm

Package: MICRO-FOOT

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Detailed specifications: SI8445DB, SI8447DB, SI8451DB, SI8457DB, SI8461DB, SI8465DB, SI8466EDB, SI8467DB, IRFP260N, SI8472DB, SI8473EDB, SI8475EDB, SI8483DB, SI8487DB, SI8489EDB, SI8497DB, SI8499DB

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