SI8810EDB PDF and Equivalents Search

 

SI8810EDB Specs and Replacement

Type Designator: SI8810EDB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: MICRO-FOOT-0.8X0.8

SI8810EDB substitution

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SI8810EDB datasheet

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SI8810EDB

SI8810 Features Low RDS(ON) Rugged and Reliable ESD Protected Gate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS N-Channel MOSFET Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Maximum Ratings Operating Junction Tempera... See More ⇒

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Detailed specifications: SI8499DB, SI8800EDB, SI8802DB, SI8805EDB, SI8806DB, SI8808DB, SI8809EDB, SI8810, 2SK3878, SI8812DB, SI8816EDB, SI8817DB, SI8819EDB, SI8821EDB, SI8822, SI8851EDB, SI9407BDY

Keywords - SI8810EDB MOSFET specs

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