SI8810EDB Datasheet and Replacement
Type Designator: SI8810EDB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: MICRO-FOOT-0.8X0.8
SI8810EDB substitution
SI8810EDB Datasheet (PDF)
si8810.pdf
SI8810Features Low RDS(ON) Rugged and Reliable ESD Protected Gate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSN-Channel MOSFETCompliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Maximum Ratings Operating Junction Tempera
Datasheet: SI8499DB , SI8800EDB , SI8802DB , SI8805EDB , SI8806DB , SI8808DB , SI8809EDB , SI8810 , 2SK3878 , SI8812DB , SI8816EDB , SI8817DB , SI8819EDB , SI8821EDB , SI8822 , SI8851EDB , SI9407BDY .
History: SI8806DB
Keywords - SI8810EDB MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI8806DB
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