SI8810EDB MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI8810EDB
   Marking Code: AJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: MICRO-FOOT-0.8X0.8

SI8810EDB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI8810EDB Datasheet (PDF)

..1. Size:127K vishay
si8810edb.pdf

8.1. Size:545K vishay
si8810.pdf

8.2. Size:523K mcc
si8810.pdf

SI8810Features Low RDS(ON) Rugged and Reliable ESD Protected Gate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSN-Channel MOSFETCompliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Maximum Ratings Operating Junction Tempera

9.1. Size:224K vishay
si8812db.pdf