SI8816EDB PDF Specs and Replacement
Type Designator: SI8816EDB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
Package: MICRO-FOOT-0.8X0.8
SI8816EDB substitution
SI8816EDB PDF Specs
Detailed specifications: SI8802DB , SI8805EDB , SI8806DB , SI8808DB , SI8809EDB , SI8810 , SI8810EDB , SI8812DB , 2N7002 , SI8817DB , SI8819EDB , SI8821EDB , SI8822 , SI8851EDB , SI9407BDY , SI9410BDY , SI9424BDY .
History: APT6029SLLG
Keywords - SI8816EDB MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APT6029SLLG
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