SI8819EDB Datasheet. Specs and Replacement

Type Designator: SI8819EDB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: MICRO-FOOT-0.8X0.8

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Detailed specifications: SI8806DB, SI8808DB, SI8809EDB, SI8810, SI8810EDB, SI8812DB, SI8816EDB, SI8817DB, IRFP064N, SI8821EDB, SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SI9424DY, SI9433BDY

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