SI9424BDY PDF and Equivalents Search

 

SI9424BDY Specs and Replacement

Type Designator: SI9424BDY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 9 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO-8

SI9424BDY substitution

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SI9424BDY datasheet

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SI9424BDY

SI9424DY-T1-E3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Ty... See More ⇒

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Detailed specifications: SI8816EDB, SI8817DB, SI8819EDB, SI8821EDB, SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SPP20N60C3, SI9424DY, SI9433BDY, SI9434BDY, SI9926CDY, SI9933CDY, SI9934BDY, SI9945BDY, JCS5N50VT

Keywords - SI9424BDY MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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