SI9926CDY Specs and Replacement
Type Designator: SI9926CDY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO-8
SI9926CDY substitution
- MOSFET ⓘ Cross-Reference Search
SI9926CDY datasheet
Detailed specifications: SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SI9424DY, SI9433BDY, SI9434BDY, AON7410, SI9933CDY, SI9934BDY, SI9945BDY, JCS5N50VT, JCS5N50RT, JCS5N50CT, JCS5N50FT, JCS7N65CB
Keywords - SI9926CDY MOSFET specs
SI9926CDY cross reference
SI9926CDY equivalent finder
SI9926CDY pdf lookup
SI9926CDY substitution
SI9926CDY replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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