SI9934BDY Datasheet and Replacement
Type Designator: SI9934BDY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SO-8
SI9934BDY substitution
SI9934BDY Datasheet (PDF)
si9936dy.pdf
June 1999Si9936DY*Dual N-Channel Enhancement Mode MOSFETGeneral Description FeaturesThese N-Channel Enhancement Mode MOSFETs are 5.0 A, 30 V. RDS(ON) = 0.050 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanceRDS(ON) = 0.080 @ VGS = 4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior switchingperformance
Datasheet: SI9407BDY , SI9410BDY , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY , SI9926CDY , SI9933CDY , IRF4905 , SI9945BDY , JCS5N50VT , JCS5N50RT , JCS5N50CT , JCS5N50FT , JCS7N65CB , JCS7N65FB , MDF13N65B .
History: SSF6NS70UD | JMSH1018AC | CEK01N65
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History: SSF6NS70UD | JMSH1018AC | CEK01N65
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