All MOSFET. SI9934BDY Datasheet

 

SI9934BDY Datasheet and Replacement


   Type Designator: SI9934BDY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SO-8
 
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SI9934BDY Datasheet (PDF)

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SI9934BDY

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SI9934BDY

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SI9934BDY

June 1999Si9936DY*Dual N-Channel Enhancement Mode MOSFETGeneral Description FeaturesThese N-Channel Enhancement Mode MOSFETs are 5.0 A, 30 V. RDS(ON) = 0.050 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanceRDS(ON) = 0.080 @ VGS = 4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior switchingperformance

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SI9934BDY

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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