CEP603AL
MOSFET. Datasheet pdf. Equivalent
Type Designator: CEP603AL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
TO220
CEP603AL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEP603AL
Datasheet (PDF)
8.1. Size:82K cet
cep6030l ceb6030l.pdf
CEP6030L/CEB6030LN-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc
8.2. Size:421K cet
cep6036 ceb6036.pdf
CEP6036/CEB6036N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 135A, RDS(ON) = 4.6m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot
8.3. Size:716K ncepower
ncep6035aqu.pdf
http://www.ncepower.com NCEP6035AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6035AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =35ADS Dfrequency switching performance. Both conduction and R =10.0m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low
8.4. Size:322K ncepower
ncep6035ag.pdf
http://www.ncepower.com NCEP6035AGNCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS
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