All MOSFET. N6004NZ Datasheet

 

N6004NZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: N6004NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: ITO-220

 N6004NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

N6004NZ Datasheet (PDF)

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 n6004nz.pdf

N6004NZ N6004NZ

Data SheetN6004NZ R07DS1022EC0100Rev.1.00N-channel MOSFET Feb 18, 2013600V, 4A, 2.0 Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 2.0 MAX. (VGS = 10 V, ID = 2.0 A) Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) High current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTJS4151PT1 | AP9571GP-HF | SSM3K01F

 

 
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