All MOSFET. N6004NZ Datasheet

 

N6004NZ Datasheet and Replacement


   Type Designator: N6004NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: ITO-220
 

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N6004NZ Datasheet (PDF)

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N6004NZ

Data SheetN6004NZ R07DS1022EC0100Rev.1.00N-channel MOSFET Feb 18, 2013600V, 4A, 2.0 Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 2.0 MAX. (VGS = 10 V, ID = 2.0 A) Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) High current

Datasheet: AOD452A , APM2030N , CEP603AL , CEB603AL , HY1906P , HY1906B , IRFP640 , MMD70R900P , 10N65 , PHP45N03LTA , PHB45N03LTA , PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH .

History: CEB73A3G | CEP14A04 | CEB603AL | CEF04N6 | FM400TU-2A | STW21NM60ND | 2N7000K

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