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N6004NZ Specs and Replacement

Type Designator: N6004NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: ITO-220

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N6004NZ datasheet

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N6004NZ

Data Sheet N6004NZ R07DS1022EC0100 Rev.1.00 N-channel MOSFET Feb 18, 2013 600V, 4A, 2.0 Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 2.0 MAX. (VGS = 10 V, ID = 2.0 A) Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) High current ... See More ⇒

Detailed specifications: AOD452A, APM2030N, CEP603AL, CEB603AL, HY1906P, HY1906B, IRFP640, MMD70R900P, 10N65, PHP45N03LTA, PHB45N03LTA, PHD45N03LTA, RU190N08, RU190N08Q, RU190N08R, RU190N08S, MDA0531EURH

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