All MOSFET. MDC0531EURH Datasheet

 

MDC0531EURH Datasheet and Replacement


   Type Designator: MDC0531EURH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8
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MDC0531EURH Datasheet (PDF)

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MDC0531EURH

MDC0531E Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20m General Description Features The MDC0531E uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides low on-state resistance, high I = 8.0A @V = 10V D GSswitching performance and excellent reliability. Low R DS(ON)RDS(ON) and low gate charge operation with gate voltage

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History: FS10KM-5 | DMN80H2D0SCTI | 2SK957-01 | BRCS5N10MC | JMTL2302A | 4N100L-TA3-T

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