All MOSFET. MDC0531EURH Datasheet

 

MDC0531EURH Datasheet and Replacement


   Type Designator: MDC0531EURH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.7 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8
 

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MDC0531EURH Datasheet (PDF)

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MDC0531EURH

MDC0531E Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20m General Description Features The MDC0531E uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides low on-state resistance, high I = 8.0A @V = 10V D GSswitching performance and excellent reliability. Low R DS(ON)RDS(ON) and low gate charge operation with gate voltage

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: STD6N10-1 | UF830

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