All MOSFET. MDD14N25CRH Datasheet

 

MDD14N25CRH Datasheet and Replacement


   Type Designator: MDD14N25CRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-252
 

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MDD14N25CRH Datasheet (PDF)

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MDD14N25CRH

MDD14N25C N-Channel MOSFET 250V, 10.2A, 0.28 General Description Features These N-channel MOSFET are produced using advanced V = 250V DSMagnaChips MOSFET Technology, which provides low on- I = 10.2A Dstate resistance, high switching performance and excellent R 0.28 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SMPS

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MDD14N25CRH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MDD14N25CFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =

Datasheet: RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH , MDD1051RH , K2611 , MDD1501RH , MDD1502RH , MDD1503RH , MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH , MDD1901RH .

History: IXFN44N100P | BUK7Y1R4-40H | 2SK3886-01MR | SSM2302GN | HM4490 | BUK7S0R9-40H | AP2426GEY-HF

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