MDD14N25CRH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDD14N25CRH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 142 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-252
MDD14N25CRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDD14N25CRH Datasheet (PDF)
mdd14n25crh.pdf
MDD14N25C N-Channel MOSFET 250V, 10.2A, 0.28 General Description Features These N-channel MOSFET are produced using advanced V = 250V DSMagnaChips MOSFET Technology, which provides low on- I = 10.2A Dstate resistance, high switching performance and excellent R 0.28 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SMPS
mdd14n25c.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MDD14N25CFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SML6040AN | SML10B75
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