MDD2N60RH Datasheet and Replacement
Type Designator: MDD2N60RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.7 nC
tr ⓘ - Rise Time: 29.6 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO-252
MDD2N60RH substitution
MDD2N60RH Datasheet (PDF)
mdd2n60rh mdi2n60.pdf

MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 1.9A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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