MDD2N60RH PDF and Equivalents Search

 

MDD2N60RH Specs and Replacement

Type Designator: MDD2N60RH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.6 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO-252

MDD2N60RH substitution

- MOSFET ⓘ Cross-Reference Search

 

MDD2N60RH datasheet

 ..1. Size:746K  magnachip
 mdd2n60rh mdi2n60.pdf pdf_icon

MDD2N60RH

MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 1.9A @ V = 10V D GS state resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for ... See More ⇒

Detailed specifications: MDD1752RH, MDD1754RH, MDD1851RH, MDD1901RH, MDD1902RH, MDD1903RH, MDD1904RH, MDD1951RH, IRFB7545, MDD3752ARH, MDD3752RH, MDD3754RH, MDD3N40RH, MDD3N50GRH, MDD4N20YRH, MDD4N25RH, MDD4N60BRH

Keywords - MDD2N60RH MOSFET specs

 MDD2N60RH cross reference

 MDD2N60RH equivalent finder

 MDD2N60RH pdf lookup

 MDD2N60RH substitution

 MDD2N60RH replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.