MDD3N50GRH MOSFET Datasheet: N-Ch, 500V, 2.8A. Full specification with pinout and replacement list

MDD3N50GRH Specs and Replacement

Type Designator: MDD3N50GRH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-252

MDD3N50GRH substitution

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MDD3N50GRH datasheet

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MDD3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDD3N40 use advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 3.4 @VGS = 10V excellent quality. MDD3N40 are suitable device for SMPS and Applications general purpose appli... See More ⇒

Detailed specifications: MDD1903RH, MDD1904RH, MDD1951RH, MDD2N60RH, MDD3752ARH, MDD3752RH, MDD3754RH, MDD3N40RH, MMIS60R580P, MDD4N20YRH, MDD4N25RH, MDD4N60BRH, MDD5N40RH, MDD5N50FRH, MDD5N50RH, MDD5N50ZRH, MDD6N60GRH