All MOSFET. MDD3N50GRH Datasheet

 

MDD3N50GRH Datasheet and Replacement


   Type Designator: MDD3N50GRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.75 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-252
 

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MDD3N50GRH Datasheet (PDF)

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MDD3N50GRH

MDD3N50G N-Channel MOSFET 500V, 2.8 A, 2.5 General Description Features The MDD3N50G uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state @VGS = 10V ID = 2.8A resistance, high switching performance and @V = 10V R 2.5 DS(ON) GSexcellent quality. MDD3N50G is suitable device for SMPS, HID and general purpose applications. App

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MDD3N50GRH

MDD3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDD3N40 use advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GSresistance, high switching performance and RDS(ON) 3.4 @VGS = 10V excellent quality. MDD3N40 are suitable device for SMPS and Applications general purpose appli

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History: JCS540BT

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