MDD7N20CRH Specs and Replacement
Type Designator: MDD7N20CRH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 46.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
Package: TO-252
MDD7N20CRH substitution
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MDD7N20CRH datasheet
mdd7n20crh.pdf
MDD7N20C N-Channel MOSFET 200V, 5.0A, 0.69 General Description Features The MDD7N20C uses advanced Magnachip s VDS = 200V MOSFET Technology, which provides low on-state ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) 0.69 excellent quality. MDD7N20C is suitable device for SMPS, HID and general purpose applications. Applications Power S... See More ⇒
mdd7n25rh.pdf
MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55 General Description Features The MDDN25 uses advanced Magnachip s V = 250V DS MOSFET Technology, which provides low on-state I = 6.2A D resistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Applicatio... See More ⇒
Detailed specifications: MDD4N20YRH, MDD4N25RH, MDD4N60BRH, MDD5N40RH, MDD5N50FRH, MDD5N50RH, MDD5N50ZRH, MDD6N60GRH, IRF740, MDD7N25RH, MDD9N40RH, MDE1752RH, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, MDF10N65BTH, MDF11N60TH
Keywords - MDD7N20CRH MOSFET specs
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History: AP10TN003I
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