All MOSFET. MDD7N20CRH Datasheet

 

MDD7N20CRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDD7N20CRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.1 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 46.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: TO-252

 MDD7N20CRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDD7N20CRH Datasheet (PDF)

 ..1. Size:792K  magnachip
 mdd7n20crh.pdf

MDD7N20CRH MDD7N20CRH

MDD7N20C N-Channel MOSFET 200V, 5.0A, 0.69General Description Features The MDD7N20C uses advanced Magnachips VDS = 200V MOSFET Technology, which provides low on-state ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) 0.69 excellent quality. MDD7N20C is suitable device for SMPS, HID and general purpose applications. Applications Power S

 8.1. Size:806K  magnachip
 mdd7n25rh.pdf

MDD7N20CRH MDD7N20CRH

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55 General Description Features The MDDN25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 6.2A Dresistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Applicatio

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE65NF068LL

 

 
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