All MOSFET. MDD7N20CRH Datasheet

 

MDD7N20CRH Datasheet and Replacement


   Type Designator: MDD7N20CRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 46.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: TO-252
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MDD7N20CRH Datasheet (PDF)

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MDD7N20CRH

MDD7N20C N-Channel MOSFET 200V, 5.0A, 0.69General Description Features The MDD7N20C uses advanced Magnachips VDS = 200V MOSFET Technology, which provides low on-state ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) 0.69 excellent quality. MDD7N20C is suitable device for SMPS, HID and general purpose applications. Applications Power S

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MDD7N20CRH

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55 General Description Features The MDDN25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 6.2A Dresistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Applicatio

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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