MDD7N25RH Specs and Replacement
Type Designator: MDD7N25RH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 77.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO-252
MDD7N25RH substitution
- MOSFET ⓘ Cross-Reference Search
MDD7N25RH datasheet
mdd7n25rh.pdf
MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55 General Description Features The MDDN25 uses advanced Magnachip s V = 250V DS MOSFET Technology, which provides low on-state I = 6.2A D resistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Applicatio... See More ⇒
mdd7n20crh.pdf
MDD7N20C N-Channel MOSFET 200V, 5.0A, 0.69 General Description Features The MDD7N20C uses advanced Magnachip s VDS = 200V MOSFET Technology, which provides low on-state ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) 0.69 excellent quality. MDD7N20C is suitable device for SMPS, HID and general purpose applications. Applications Power S... See More ⇒
Detailed specifications: MDD4N25RH, MDD4N60BRH, MDD5N40RH, MDD5N50FRH, MDD5N50RH, MDD5N50ZRH, MDD6N60GRH, MDD7N20CRH, IRF840, MDD9N40RH, MDE1752RH, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, MDF10N65BTH, MDF11N60TH, MDF11N65BTH
Keywords - MDD7N25RH MOSFET specs
MDD7N25RH cross reference
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MDD7N25RH substitution
MDD7N25RH replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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