All MOSFET. MDD9N40RH Datasheet

 

MDD9N40RH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDD9N40RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.6 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 75.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252

 MDD9N40RH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDD9N40RH Datasheet (PDF)

 ..1. Size:834K  magnachip
 mdd9n40rh.pdf

MDD9N40RH MDD9N40RH

MDD9N40 N-Channel MOSFET 400V, 6A, 0.85General Description Features These N-channel MOSFET are produced using advanced VDS = 400V MagnaChips MOSFET Technology, which provides low on- ID = 6A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.85 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top