All MOSFET. MDD9N40RH Datasheet

 

MDD9N40RH Datasheet and Replacement


   Type Designator: MDD9N40RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 75.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252
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MDD9N40RH Datasheet (PDF)

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MDD9N40RH

MDD9N40 N-Channel MOSFET 400V, 6A, 0.85General Description Features These N-channel MOSFET are produced using advanced VDS = 400V MagnaChips MOSFET Technology, which provides low on- ID = 6A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.85 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFI7536G | WMM11N80M3 | FDMS9620S

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