MDD9N40RH Specs and Replacement
Type Designator: MDD9N40RH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 75.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-252
MDD9N40RH substitution
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MDD9N40RH datasheet
mdd9n40rh.pdf
MDD9N40 N-Channel MOSFET 400V, 6A, 0.85 General Description Features These N-channel MOSFET are produced using advanced VDS = 400V MagnaChip s MOSFET Technology, which provides low on- ID = 6A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.85 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed s... See More ⇒
Detailed specifications: MDD4N60BRH, MDD5N40RH, MDD5N50FRH, MDD5N50RH, MDD5N50ZRH, MDD6N60GRH, MDD7N20CRH, MDD7N25RH, 20N60, MDE1752RH, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, MDF10N65BTH, MDF11N60TH, MDF11N65BTH, MDF12N50BTH
Keywords - MDD9N40RH MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MDF10N65BTH | APM4317K | TPC8026
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