All MOSFET. MDD9N40RH Datasheet

 

MDD9N40RH Datasheet and Replacement


   Type Designator: MDD9N40RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 75.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252
 

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MDD9N40RH Datasheet (PDF)

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MDD9N40RH

MDD9N40 N-Channel MOSFET 400V, 6A, 0.85General Description Features These N-channel MOSFET are produced using advanced VDS = 400V MagnaChips MOSFET Technology, which provides low on- ID = 6A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.85 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed s

Datasheet: MDD4N60BRH , MDD5N40RH , MDD5N50FRH , MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH , MDD7N25RH , 20N60 , MDE1752RH , MDF10N50TH , MDF10N60BTH , MDF10N60GTH , MDF10N65BTH , MDF11N60TH , MDF11N65BTH , MDF12N50BTH .

History: IXFP4N100QM

Keywords - MDD9N40RH MOSFET datasheet

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