All MOSFET. MDE1752RH Datasheet

 

MDE1752RH Datasheet and Replacement


   Type Designator: MDE1752RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26.4 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 243 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-263AB
 

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MDE1752RH Datasheet (PDF)

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MDE1752RH

MDE1752 N-Channel Trench MOSFET 40V, 66A, 8.0m General Description Features The MDE1752 uses advanced MagnaChips trench V = 40V DSMOSFET Technology to provide high performance in on- I = 66A @V = 10V D GSstate resistance, switching performance and reliability R DS(ON)

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