MDE1752RH Specs and Replacement
Type Designator: MDE1752RH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 243 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-263AB
MDE1752RH substitution
- MOSFET ⓘ Cross-Reference Search
MDE1752RH datasheet
mde1752rh.pdf
MDE1752 N-Channel Trench MOSFET 40V, 66A, 8.0m General Description Features The MDE1752 uses advanced MagnaChip s trench V = 40V DS MOSFET Technology to provide high performance in on- I = 66A @V = 10V D GS state resistance, switching performance and reliability R DS(ON) ... See More ⇒
Detailed specifications: MDD5N40RH, MDD5N50FRH, MDD5N50RH, MDD5N50ZRH, MDD6N60GRH, MDD7N20CRH, MDD7N25RH, MDD9N40RH, IRF540N, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, MDF10N65BTH, MDF11N60TH, MDF11N65BTH, MDF12N50BTH, MDF12N50FTH
Keywords - MDE1752RH MOSFET specs
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MDE1752RH replacement
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